SanDisk and Toshiba announce 19nm NAND flash memory
By Paul Ridden
April 24, 2011
As our use of mobile technology increases, so does our demand for more built-in device storage capacity in smaller and smaller form factors. Only a few weeks have passed since Intel began using its 25 nanometer (nm) NAND flash memory in its 320 series SSD storage solutions and just days since the company joined with Micron Technology to announce the breakthrough 20nm process technology. Now SanDisk and Toshiba have developed and fabricated NAND flash memory modules with 19nm process technology.
The new process, which is the finest yet achieved, has been applied to 2-bit-per-cell (X2) 64 gigabit monolithic chips and offers the highest single chip density of 8GB. It will allow for the creation of 128GB devices using 16 chips for use in smartphones, tablets and removable storage devices with the high capacities and small form factors. The modules have also been equipped with Toggle DDR2.0 for enhanced data transfer speeds.
Implementing sophisticated advanced process innovations and cell-design solutions for the new memory die, SanDisk says that its "All-Bit-Line architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell NAND flash memory chips that do not sacrifice performance or reliability."
Samples of the new modules are being made available towards the end of April, with mass production scheduled to start from Q3 and plans are already progressing towards the introduction of 3-bit-per-cell (X3) products based on the new process, which will be added to SanDisk's product line as mass production of the X2 modules begins.
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