Indium gallium arsenide transistor could boost microchip performance

As there is a finite number of transistors that can be effectively packed onto a silicon chip, researchers have been searching for an alternative to silicon that would allow integrated circuit development to continue to keep pace with Moore's Law. Researchers at MIT have recently used indium gallium arsenide to create the smallest transistor ever built from a material other than silicon. The new transistor, which is said to “work well,” is just 22 nanometers long and is a metal-oxide semiconductor field-effect transistor (MOSFET), which is the kind typically used in microprocessors.

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