Internal structure of a flash memory drive (Photo: Nrbelex)
Schematic cross-sectional structure of a 3D V-NAND flash memory chip (Photo: Jim Handy)
Comparison between a field-effect transistor and a NAND flash memory cell (Image: B. Dodson)
Samsung's 3D Vertical NAND flash memory reads and writes twice as fast as conventional NAND memory while using less power (Photo: Samsung)
Samsung has announced production of the first solid state drives (SSD) based on its new 3D V-NAND flash memory. V-NAND flash memories read and write twice as fast as conventional NAND memories, and last 10 times longer while consuming 50 percent less power. At present, the 3D chips offer about the same physical bit density as do more conventional NAND flash memory chips, but while 2D geometries are reaching the end state of their scaling potential, the 3D chips offer as much as two orders of magnitude of additional elbow room for denser devices.
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