Researchers push miniaturization even further with finFET transistors

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The finline structure in finFETs allows for greater electrical insulation and processing speeds at least five times higher than traditional MOSFET transistors

Article Summary

Researchers at Purdue University have reported important progress in developing finFETs, a type of transistor that some say will eventually substitute the silicon-based kind because it allows engineers to push miniaturization even further in the perpetual effort to validate the predictions of Moore's Law.

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