Fujitsu and Advantest JV to create 65nm process semiconductor prototypes using Electron Beam Direct Lithography as a new development environment

September 15, 2006 Fujitsu and Advantest today announced plans to establish a joint venture to create prototype semiconductors by using electron beam direct lithography, a technology that combines 65 nanometer (nm) and 45nm semiconductor process technologies with electron beam exposure systems. Using technologies it develops, in fiscal 2007 the joint venture plans to provide customers with 65nm process prototype services (shuttle services) as a new development environment, and make the environment suitable for 45nm process technologies in the future.

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